MJ11032 Bipolar Transistor

Characteristics of MJ11032 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 50 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 1000 to 18000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ11032

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11032 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJ11032 is the MJ11033.

Replacement and Equivalent for MJ11032 transistor

You can replace the MJ11032 with the MJ11032G.

Lead-free Version

The MJ11032G transistor is the lead-free version of the MJ11032.
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