BDX67B Bipolar Transistor

Characteristics of BDX67B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX67B

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX67B is the BDX66B.

Replacement and Equivalent for BDX67B transistor

You can replace the BDX67B with the BDX67C, BDX69B, BDX69C, MJ11016, MJ11016G, MJ11032, MJ11032G or MJ4035.
If you find an error please send an email to mail@el-component.com