MJ11032G Bipolar Transistor

Characteristics of MJ11032G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 50 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 1000 to 18000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11032G is the lead-free version of the MJ11032 transistor

Pinout of MJ11032G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11032G equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJ11032G is the MJ11033G.

Replacement and Equivalent for MJ11032G transistor

You can replace the MJ11032G with the MJ11032.
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