MJ11014 Bipolar Transistor

Characteristics of MJ11014 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 90 V
  • Collector-Base Voltage, max: 90 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ11014

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11014 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJ11014 is the MJ11013.

Replacement and Equivalent for MJ11014 transistor

You can replace the MJ11014 with the MJ11014G, MJ11016, MJ11016G, MJ11030, MJ11030G, MJ11032 or MJ11032G.

Lead-free Version

The MJ11014G transistor is the lead-free version of the MJ11014.
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