MJ11030 Bipolar Transistor

Characteristics of MJ11030 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 90 V
  • Collector-Base Voltage, max: 90 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 50 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 1000 to 18000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ11030

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11030 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJ11030 is the MJ11031.

Replacement and Equivalent for MJ11030 transistor

You can replace the MJ11030 with the MJ11030G, MJ11032 or MJ11032G.

Lead-free Version

The MJ11030G transistor is the lead-free version of the MJ11030.
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