MJ11016G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 120 V
• Collector-Base Voltage, max: 120 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 30 A
• Collector Dissipation: 200 W
• DC Current Gain (h_fe): 1000
• Transition Frequency, min: 4 MHz
• Operating and Storage Junction Temperature Range: -65 to +200 °C
• Package: TO-3
• The MJ11016G is the lead-free version of the MJ11016 transistor

Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the MJ11016G is the MJ11015G.You can replace the MJ11016G with the MJ11016, MJ11032 or MJ11032G.