BDX69B Bipolar Transistor

Characteristics of BDX69B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 25 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX69B

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX69B is the BDX68B.

Replacement and Equivalent for BDX69B transistor

You can replace the BDX69B with the BDX69C, MJ11016, MJ11016G, MJ11032 or MJ11032G.
If you find an error please send an email to mail@el-component.com