MJ11014G Bipolar Transistor

Characteristics of MJ11014G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 90 V
  • Collector-Base Voltage, max: 90 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11014G is the lead-free version of the MJ11014 transistor

Pinout of MJ11014G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11014G equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJ11014G is the MJ11013G.

Replacement and Equivalent for MJ11014G transistor

You can replace the MJ11014G with the MJ11014, MJ11016, MJ11016G, MJ11030, MJ11030G, MJ11032 or MJ11032G.
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