BDX65C Bipolar Transistor

Characteristics of BDX65C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 117 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX65C

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX65C is the BDX64C.

Replacement and Equivalent for BDX65C transistor

You can replace the BDX65C with the BDX67C, BDX69C, MJ11016, MJ11016G, MJ11032 or MJ11032G.
If you find an error please send an email to mail@el-component.com