KSB986-Y Bipolar Transistor
Characteristics of KSB986-Y Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 150 V
- Emitter-Base Voltage, max: 8 V
- Collector Current − Continuous, max: 1.5 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 8000 to 30000
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular 2SD986-K transistor
Pinout of KSB986-Y
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for KSB986-Y transistor
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