KSB986-Y Bipolar Transistor

Characteristics of KSB986-Y Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 8000 to 30000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD986-K transistor

Pinout of KSB986-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB986-Y transistor can have a current gain of 8000 to 30000. The gain of the KSB986 will be in the range from 2000 to 30000, for the KSB986-O it will be in the range from 4000 to 10000, for the KSB986-R it will be in the range from 2000 to 5000.

Complementary PNP transistor

The complementary PNP transistor to the KSB986-Y is the KSB795-Y.

Replacement and Equivalent for KSB986-Y transistor

You can replace the KSB986-Y with the 2SD1509, 2SD986, 2SD986-K, BD169, BD237, BD237G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD779, KSE802, KSE803, MJE242, MJE244, MJE270, MJE270G, MJE722, MJE802, MJE802G, MJE803 or MJE803G.
If you find an error please send an email to mail@el-component.com