MJE15030G Bipolar Transistor

Characteristics of MJE15030G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE15030G is the lead-free version of the MJE15030 transistor

Pinout of MJE15030G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE15030G is the MJE15031G.

Replacement and Equivalent for MJE15030G transistor

You can replace the MJE15030G with the BDX53F, FJP5200, FJP5200O, FJP5200R, FJPF5200, FJPF5200O, FJPF5200R, MJE15030, MJE15032, MJE15032G, MJE5740, MJF15030 or MJF15030G.
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