FJPF5200 Bipolar Transistor

Characteristics of FJPF5200 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 250 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 17 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 55 to 160
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of FJPF5200

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJPF5200 transistor can have a current gain of 55 to 160. The gain of the FJPF5200O will be in the range from 80 to 160, for the FJPF5200R it will be in the range from 55 to 100.

Complementary PNP transistor

The complementary PNP transistor to the FJPF5200 is the FJPF1943.

Replacement and Equivalent for FJPF5200 transistor

You can replace the FJPF5200 with the FJP5200.
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