FJP5200O Bipolar Transistor

Characteristics of FJP5200O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 250 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 17 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of FJP5200O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJP5200O transistor can have a current gain of 80 to 160. The gain of the FJP5200 will be in the range from 55 to 160, for the FJP5200R it will be in the range from 55 to 100.

Complementary PNP transistor

The complementary PNP transistor to the FJP5200O is the FJP1943O.

Replacement and Equivalent for FJP5200O transistor

You can replace the FJP5200O with the FJPF5200 or FJPF5200O.
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