FJP5200 Bipolar Transistor

Characteristics of FJP5200 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 250 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 17 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 55 to 160
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of FJP5200

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJP5200 transistor can have a current gain of 55 to 160. The gain of the FJP5200O will be in the range from 80 to 160, for the FJP5200R it will be in the range from 55 to 100.

Complementary PNP transistor

The complementary PNP transistor to the FJP5200 is the FJP1943.

Replacement and Equivalent for FJP5200 transistor

You can replace the FJP5200 with the FJPF5200.
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