MJF15030G Bipolar Transistor

Characteristics of MJF15030G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 36 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular MJE15030G transistor
  • The MJF15030G is the lead-free version of the MJF15030 transistor

Pinout of MJF15030G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJF15030G is the MJF15031G.

Replacement and Equivalent for MJF15030G transistor

You can replace the MJF15030G with the BDX53F, FJP5200, FJP5200O, FJP5200R, FJPF5200, FJPF5200O, FJPF5200R, MJE15030, MJE15030G, MJE15032, MJE15032G, MJE5740 or MJF15030.
If you find an error please send an email to mail@el-component.com