FJPF5200O Bipolar Transistor

Characteristics of FJPF5200O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 250 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 17 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of FJPF5200O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJPF5200O transistor can have a current gain of 80 to 160. The gain of the FJPF5200 will be in the range from 55 to 160, for the FJPF5200R it will be in the range from 55 to 100.

Complementary PNP transistor

The complementary PNP transistor to the FJPF5200O is the FJPF1943O.

Replacement and Equivalent for FJPF5200O transistor

You can replace the FJPF5200O with the FJP5200 or FJP5200O.
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