FJP5200R Bipolar Transistor
Characteristics of FJP5200R Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 250 V
- Collector-Base Voltage, max: 250 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 17 A
- Collector Dissipation: 80 W
- DC Current Gain (hfe): 55 to 100
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Pinout of FJP5200R
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for FJP5200R transistor
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