FJP5200R Bipolar Transistor

Characteristics of FJP5200R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 250 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 17 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 55 to 100
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of FJP5200R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJP5200R transistor can have a current gain of 55 to 100. The gain of the FJP5200 will be in the range from 55 to 160, for the FJP5200O it will be in the range from 80 to 160.

Complementary PNP transistor

The complementary PNP transistor to the FJP5200R is the FJP1943R.

Replacement and Equivalent for FJP5200R transistor

You can replace the FJP5200R with the FJPF5200 or FJPF5200R.
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