FJPF5200R Bipolar Transistor

Characteristics of FJPF5200R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 250 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 17 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 55 to 100
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of FJPF5200R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJPF5200R transistor can have a current gain of 55 to 100. The gain of the FJPF5200 will be in the range from 55 to 160, for the FJPF5200O it will be in the range from 80 to 160.

Complementary PNP transistor

The complementary PNP transistor to the FJPF5200R is the FJPF1943R.

Replacement and Equivalent for FJPF5200R transistor

You can replace the FJPF5200R with the FJP5200 or FJP5200R.
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