BDW63A Bipolar Transistor

Characteristics of BDW63A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDW63A

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDW63A is the BDW64A.

Replacement and Equivalent for BDW63A transistor

You can replace the BDW63A with the 2SC1985, 2SC1986, 2SC2315, 2SC2316, 2SD823, BD203, BD243A, BD243B, BD243C, BD303, BD535, BD537, BD543A, BD543B, BD543C, BD545A, BD545B, BD545C, BD645, BD647, BD649, BD651, BD797, BD799, BD801, BD807, BD809, BD897, BD897A, BD899, BD899A, BD901, BDT81, BDT81F, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDW23A, BDW23B, BDW23C, BDW63B, BDW63C, BDW63D, BDW73A, BDW73B, BDW73C, BDW73D, BDX33A, BDX33B, BDX33BG, BDX33C, BDX33CG, BDX33D, BDX53A, BDX53B, BDX53BG, BDX53C, BDX53CG, BDX53D, BDX77, D44H11, D44H11FP, D44H8, MJE15028, MJE15028G, TIP41D or TIP42D.
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