BD809 Bipolar Transistor

Characteristics of BD809 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 30
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of BD809

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD809 is the BD810.

Replacement and Equivalent for BD809 transistor

You can replace the BD809 with the 2N6388, 2N6388G, 2SC2527, 2SC3346, 2SC3346-O, 2SC3346-Y, 2SC3710, 2SC3710-O, 2SC3710-Y, 2SC3710A, 2SC3710A-O, 2SC3710A-Y, BD545B, BD545C, BDT63A, BDT63B, BDT63C, BDT65A, BDT65B, BDT65C, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDW41, BDW41G, BDW42, BDW42G, BDW43, BDW93B, BDW93C, BDW93CF, BDX33B, BDX33BG, BDX33C, BDX33CG, BDX33D, D44H11, D44H11FP, MJF6388, MJF6388G, TIP141T, TIP142T or TTC3710B.
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