BDT87 Bipolar Transistor

Characteristics of BDT87 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT87

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT87 is the BDT88.

Replacement and Equivalent for BDT87 transistor

You can replace the BDT87 with the BDT87F or BDW43.
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