BD651 Bipolar Transistor

Characteristics of BD651 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 140 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 62.5 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD651

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD651 is the BD652.

Replacement and Equivalent for BD651 transistor

You can replace the BD651 with the BDT63C, BDT65C, BDW43, BDW73D or BDX33D.
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