BDW23C Bipolar Transistor

Characteristics of BDW23C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDW23C

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDW23C is the BDW24C.

Replacement and Equivalent for BDW23C transistor

You can replace the BDW23C with the BD243C, BD543C, BD545C, BD649, BD651, BD801, BD901, BDT85, BDT85F, BDT87, BDT87F, BDW63C, BDW63D, BDW73C, BDW73D, BDX33C, BDX33CG, BDX33D, BDX53C, BDX53CG, BDX53D, BDX53E, BDX53F, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, TIP41D, TIP41E, TIP41F, TIP42D, TIP42E or TIP42F.
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