BD899A Bipolar Transistor

Characteristics of BD899A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD899A

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD899A is the BD900A.

Replacement and Equivalent for BD899A transistor

You can replace the BD899A with the 2N6044, 2N6044G, 2N6045, 2N6045G, 2N6388, 2N6388G, 2N6530, 2N6532, 2SD1196, 2SD1277A, 2SD1277A-P, 2SD1277A-Q, 2SD1830, BD647, BD649, BD651, BD899, BD901, BDT63A, BDT63B, BDT63C, BDT65A, BDT65B, BDT65C, BDW41, BDW41G, BDW42, BDW42G, BDW43, BDW73B, BDW73C, BDW73D, BDW93B, BDW93C, BDW93CF, BDX33B, BDX33BG, BDX33C, BDX33CG, BDX33D, BDX53B, BDX53BG, BDX53C, BDX53CG, MJF6388, MJF6388G, TIP101, TIP101G, TIP102, TIP102G, TIP131, TIP131G, TIP132, TIP132G, TIP141T or TIP142T.
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