BDW63C Bipolar Transistor

Characteristics of BDW63C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDW63C

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDW63C is the BDW64C.

Replacement and Equivalent for BDW63C transistor

You can replace the BDW63C with the BD243C, BD543C, BD545C, BD649, BD651, BD801, BD901, BDT85, BDT85F, BDT87, BDT87F, BDW23C, BDW63D, BDW73C, BDW73D, BDX33C, BDX33CG, BDX33D, BDX53C, BDX53CG, BDX53D, BDX53E, BDX53F, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, TIP41D, TIP41E, TIP41F, TIP42D, TIP42E or TIP42F.
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