BDT85F Bipolar Transistor

Characteristics of BDT85F Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 36 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F

Pinout of BDT85F

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT85F is the BDT86F.

Replacement and Equivalent for BDT85F transistor

You can replace the BDT85F with the BD545C, BDT85, BDT87, BDT87F, BDW42, BDW42G, BDW43, MJF6388 or MJF6388G.
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