BD649 Bipolar Transistor

Characteristics of BD649 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 62.5 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD649

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD649 is the BD650.

Replacement and Equivalent for BD649 transistor

You can replace the BD649 with the 2N6045, 2N6045G, 2N6532, 2SD1196, 2SD1830, BD651, BD901, BDT63B, BDT63C, BDT65B, BDT65C, BDW42, BDW42G, BDW43, BDW73C, BDW73D, BDW93C, BDW93CF, BDX33C, BDX33CG, BDX33D, BDX53C, BDX53CG, MJF6388, MJF6388G, TIP102, TIP102G, TIP132, TIP132G or TIP142T.
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