BDT83F Bipolar Transistor

Characteristics of BDT83F Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 36 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F

Pinout of BDT83F

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT83F is the BDT84F.

Replacement and Equivalent for BDT83F transistor

You can replace the BDT83F with the BD545B, BD545C, BDT83, BDT85, BDT85F, BDT87, BDT87F, BDW41, BDW41G, BDW42, BDW42G, BDW43, MJF6388 or MJF6388G.
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