2SB1250-Q Bipolar Transistor

Characteristics of 2SB1250-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 8000 to 30000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1250-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1250-Q transistor can have a current gain of 8000 to 30000. The gain of the 2SB1250 will be in the range from 5000 to 30000, for the 2SB1250-P it will be in the range from 5000 to 15000.


Sometimes the "2S" prefix is not marked on the package - the 2SB1250-Q might only be marked "B1250-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1250-Q is the 2SD1890-Q.

Replacement and Equivalent for 2SB1250-Q transistor

You can replace the 2SB1250-Q with the 2SA1488A, 2SA771, 2SB1024, 2SB1226, 2SB1227, 2SB1228, 2SB1251, 2SB1251-Q, 2SB1252, 2SB1252-Q, 2SB1481, 2SB1626, 2SB884, 2SB885, 2SB886, BD242B, BD242C, BD244B, BD244C, BD538, BD540B, BD540C, BD544B, BD544C, BD546B, BD546C, BD648, BD650, BD652, BD800, BD802, BD810, BD900, BD900A, BD902, BD952, BD954, BD956, BDT60A, BDT60B, BDT60C, BDT62A, BDT62B, BDT62C, BDT64A, BDT64B, BDT64C, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDW46, BDW46G, BDW47, BDW47G, BDW48, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, BDX54B, BDX54BG, BDX54C, BDX54CG, BDX54D, BDX54E, BDX54F, BDX78, D44C10, D44C11, D44C12, D45C10, D45C11, D45C12, D45H11, D45H11FP, MJE15029, MJE15029G, MJE15031, MJE15031G, MJE702T, MJE703T, MJF127, MJF127G, MJF15031, MJF15031G, TIP126, TIP126G, TIP127, TIP127G, TIP146T or TIP147T.
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