BDT60C Bipolar Transistor

Characteristics of BDT60C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT60C

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT60C is the BDT61C.

Replacement and Equivalent for BDT60C transistor

You can replace the BDT60C with the BD652, BDT62C, BDT64C, BDW48, BDW54D, BDW64D, BDW74D or BDX34D.
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