2SB1626 Bipolar Transistor

Characteristics of 2SB1626 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -110 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 5000 to 30000
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1626

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1626 transistor can have a current gain of 5000 to 30000. The gain of the 2SB1626-O will be in the range from 5000 to 12000, for the 2SB1626-P it will be in the range from 6500 to 20000, for the 2SB1626-Y it will be in the range from 15000 to 30000.

Equivalent circuit

2SB1626 equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1626 might only be marked "B1626".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1626 is the 2SD2495.

Replacement and Equivalent for 2SB1626 transistor

You can replace the 2SB1626 with the BD652, BDT62C, BDT64C, BDT88, BDT88F, BDW48, BDX34D, BDX54D, BDX54E, BDX54F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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