BDT62B Bipolar Transistor

Characteristics of BDT62B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT62B

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT62B is the BDT63B.

Replacement and Equivalent for BDT62B transistor

You can replace the BDT62B with the BDT62C, BDT64B, BDT64C, BDW47, BDW47G, BDW48, MJF6668, MJF6668G or TIP147T.
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