BD648 Bipolar Transistor

Characteristics of BD648 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 62.5 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD648

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD648 is the BD647.

Replacement and Equivalent for BD648 transistor

You can replace the BD648 with the 2N6041, 2N6041G, 2N6042, 2N6042G, 2N6668, 2N6668G, 2SB1228, 2SB886, 2SB951A, 2SB951A-P, 2SB951A-Q, BD650, BD652, BD900, BD900A, BD902, BDT62A, BDT62B, BDT62C, BDT64A, BDT64B, BDT64C, BDW46, BDW46G, BDW47, BDW47G, BDW48, BDW74B, BDW74C, BDW74D, BDW94B, BDW94C, BDW94CF, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, BDX54B, BDX54BG, BDX54C, BDX54CG, MJF6668, MJF6668G, TIP106, TIP106G, TIP107, TIP107G, TIP136, TIP136G, TIP137, TIP137G, TIP146T or TIP147T.
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