BDT62A Bipolar Transistor

Characteristics of BDT62A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT62A

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT62A is the BDT63A.

Replacement and Equivalent for BDT62A transistor

You can replace the BDT62A with the 2N6668, 2N6668G, BDT62B, BDT62C, BDT64A, BDT64B, BDT64C, BDW46, BDW46G, BDW47, BDW47G, BDW48, MJF6668, MJF6668G, TIP146T or TIP147T.
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