2SB1252-Q Bipolar Transistor

Characteristics of 2SB1252-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 45 W
  • DC Current Gain (hfe): 8000 to 30000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1252-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1252-Q transistor can have a current gain of 8000 to 30000. The gain of the 2SB1252 will be in the range from 5000 to 30000, for the 2SB1252-P it will be in the range from 5000 to 15000.


Sometimes the "2S" prefix is not marked on the package - the 2SB1252-Q might only be marked "B1252-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1252-Q is the 2SD1892-Q.

Replacement and Equivalent for 2SB1252-Q transistor

You can replace the 2SB1252-Q with the 2SB1227, 2SB1228, 2SB1626, 2SB885, 2SB886, BD244C, BD540C, BD544C, BD546C, BD650, BD652, BD802, BD902, BD954, BD956, BDT62B, BDT62C, BDT64B, BDT64C, BDT86, BDT86F, BDT88, BDT88F, BDW47, BDW47G, BDW48, BDX34C, BDX34CG, BDX34D, BDX54C, BDX54CG, BDX54D, BDX54E, BDX54F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF127, MJF127G, MJF15031, MJF15031G, TIP127, TIP127G or TIP147T.
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