BDW47G Bipolar Transistor

Characteristics of BDW47G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 85 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • The BDW47G is the lead-free version of the BDW47 transistor

Pinout of BDW47G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BDW47G equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the BDW47G is the BDW42G.

Replacement and Equivalent for BDW47G transistor

You can replace the BDW47G with the BDW47, BDW48, MJF6668 or MJF6668G.
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