BD652 Bipolar Transistor

Characteristics of BD652 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 62.5 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD652

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD652 is the BD651.

Replacement and Equivalent for BD652 transistor

You can replace the BD652 with the BDT62C, BDT64C, BDW48, BDW74D or BDX34D.
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