BDT64A Bipolar Transistor

Characteristics of BDT64A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT64A

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT64A is the BDT65A.

Replacement and Equivalent for BDT64A transistor

You can replace the BDT64A with the BDT64B, BDT64C, BDW46, BDW46G, BDW47, BDW47G, BDW48, MJF6668 or MJF6668G.
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