2N5883G Bipolar Transistor

Characteristics of 2N5883G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -25 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The 2N5883G is the lead-free version of the 2N5883 transistor

Pinout of 2N5883G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N5883G is the 2N5885G.

Replacement and Equivalent for 2N5883G transistor

You can replace the 2N5883G with the 2N5883, 2N5884, 2N5884G, MJ14001, MJ14001G, MJ14003 or MJ14003G.
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