BDX53E Bipolar Transistor

Characteristics of BDX53E Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 140 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 500
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDX53E

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX53E is the BDX54E.

Replacement and Equivalent for BDX53E transistor

You can replace the BDX53E with the BDX53F.
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