2N6668G Bipolar Transistor

Characteristics of 2N6668G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 65 W
  • DC Current Gain (hfe): 1000 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The 2N6668G is the lead-free version of the 2N6668 transistor

Pinout of 2N6668G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

2N6668G equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the 2N6668G is the 2N6388G.

Replacement and Equivalent for 2N6668G transistor

You can replace the 2N6668G with the 2N6668, BD546B, BD546C, BD810, BDT62A, BDT62B, BDT62C, BDT64A, BDT64B, BDT64C, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDW46, BDW46G, BDW47, BDW47G, BDW48, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, D45H11, D45H11FP, TIP146T or TIP147T.
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