MJF6668G Bipolar Transistor

Characteristics of MJF6668G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 3000 to 15000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F
  • The MJF6668G is the lead-free version of the MJF6668 transistor

Pinout of MJF6668G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJF6668G is the MJF6388G.

Replacement and Equivalent for MJF6668G transistor

You can replace the MJF6668G with the BD546C, BDT86, BDT86F, BDT88, BDT88F, BDW47, BDW47G, BDW48 or MJF6668.
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