BD802 Bipolar Transistor

Characteristics of BD802 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 65 W
  • DC Current Gain (hfe): 30
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of BD802

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD802 is the BD801.

Replacement and Equivalent for BD802 transistor

You can replace the BD802 with the 2N6042, 2N6042G, 2SA1077, 2SB1228, 2SB886, BD544C, BD546C, BD650, BD652, BD902, BDT62B, BDT62C, BDT64B, BDT64C, BDT86, BDT86F, BDT88, BDT88F, BDW47, BDW47G, BDW48, BDW74C, BDW74D, BDW94C, BDW94CF, BDX34C, BDX34CG, BDX34D, BDX54C, BDX54CG, BDX54D, BDX54E, BDX54F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031, MJF15031G, MJF6668, MJF6668G, TIP107, TIP107G, TIP137, TIP137G or TIP147T.
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