BDT88 Bipolar Transistor

Characteristics of BDT88 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT88

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT88 is the BDT87.

Replacement and Equivalent for BDT88 transistor

You can replace the BDT88 with the BDT88F, BDW48, FJP1943, FJP1943O, FJP1943R, FJPF1943, FJPF1943O or FJPF1943R.
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