MJF6668 Bipolar Transistor

Characteristics of MJF6668 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 3000 to 15000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F

Pinout of MJF6668

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJF6668 is the MJF6388.

Replacement and Equivalent for MJF6668 transistor

You can replace the MJF6668 with the BD546C, BDT86, BDT86F, BDT88, BDT88F, BDW47, BDW47G, BDW48 or MJF6668G.

Lead-free Version

The MJF6668G transistor is the lead-free version of the MJF6668.
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