MJF6668 Bipolar Transistor
Characteristics of MJF6668 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 3000 to 15000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220F
Pinout of MJF6668
Complementary NPN transistor
Replacement and Equivalent for MJF6668 transistor
Lead-free Version
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