MJE15029G Bipolar Transistor

Characteristics of MJE15029G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE15029G is the lead-free version of the MJE15029 transistor

Pinout of MJE15029G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE15029G is the MJE15028G.

Replacement and Equivalent for MJE15029G transistor

You can replace the MJE15029G with the 2SA1077, BD652, BDT62C, BDT64C, BDT88, BDT88F, BDW48, BDW74D, BDX34D, BDX54D, BDX54E, BDX54F, FJP1943, FJP1943O, FJP1943R, FJPF1943, FJPF1943O, FJPF1943R, MJE15029, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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