BDW53D Bipolar Transistor

Characteristics of BDW53D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDW53D

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDW53D is the BDW54D.

Replacement and Equivalent for BDW53D transistor

You can replace the BDW53D with the 2SD772, 2SD772A, 2SD792, 2SD792A, BD539D, BD651, BD955, BDT61C, BDT87, BDT87F, BDW63D, BDW73D, BDX33D, BDX53D, BDX53E, BDX53F, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, TIP41D, TIP41E, TIP41F, TIP42D, TIP42E or TIP42F.
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