BDT61C Bipolar Transistor

Characteristics of BDT61C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT61C

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT61C is the BDT60C.

Replacement and Equivalent for BDT61C transistor

You can replace the BDT61C with the BD651, BDT63C, BDT65C, BDW43, BDW53D, BDW63D, BDW73D or BDX33D.
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