BDW93CF Bipolar Transistor
Characteristics of BDW93CF Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 30 W
- DC Current Gain (hfe): 750 to 2000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220F
Pinout of BDW93CF
Complementary PNP transistor
Replacement and Equivalent for BDW93CF transistor
If you find an error please send an email to mail@el-component.com