BDW42G Bipolar Transistor

Characteristics of BDW42G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 85 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • The BDW42G is the lead-free version of the BDW42 transistor

Pinout of BDW42G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BDW42G equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the BDW42G is the BDW47G.

Replacement and Equivalent for BDW42G transistor

You can replace the BDW42G with the BDW42, BDW43, MJF6388 or MJF6388G.
If you find an error please send an email to