BDW42G Bipolar Transistor
Characteristics of BDW42G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 15 A
- Collector Dissipation: 85 W
- DC Current Gain (hfe): 1000
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
- The BDW42G is the lead-free version of the BDW42 transistor
Pinout of BDW42G
Equivalent circuit
![BDW42G equivalent circuit](/images/bipolar-transistor/bdw42g-equivalent-circuit.jpg)
Complementary PNP transistor
Replacement and Equivalent for BDW42G transistor
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